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物理学报  2005 

Synthesis of GaN nanowires and nano-pyramids in a two-hot-boat chemical vapor deposition system via an In-doping technique
在双热舟化学气相沉积系统中通过掺In技术生长GaN纳米线和纳米锥

Keywords: GaN,nanostructure,transmission electron microscopy,photoluminesce nce
GaN
,纳米结构,透射电子显微镜,光致荧光谱

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Abstract:

A two-hot-boat chemical vapor deposition system was modified from a thermal evaporation equipment. This system has the advantage of high vacuum, rapid heating rate and temperature separately controlled boats for the source and samples. These are in favor of synthesizing compound semiconducting nano-materials. By the system, we have synthesized high-quality wurtzite single crystal GaN nanowires and nanotip triangle pyramids via an in-situ doping indium surfactant technique on Si and 3C-SiC epilayer/Si substrates. The products were analyzed by x-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, energy-dispersive x-ray spectroscopy, and photoluminescence measurements. The GaN nanotip triangle pyramids, synthesized with this novel method, have potential application in electronic/ photonic devices for field-emission and laser.

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