ETCHING PROPERTIES OF AMORPHOUS HYDROGENATED CARBON FILMS IN A MULTIPOLE ELECTRON CYCLOTRON RESONANCE OXYGEN PLASMA SYSTEM
非晶含氢碳膜的氧等离子体刻蚀性能研究

The etching properties of amorphous hydrogenated carbon films deposited from benzene vapor in a multipole electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition system have been investigated.Etch rates of these carbon films as a function of the process variables,includ-ing gas pressure and microwave power were measured,and compared with other resist materials.The results show that the film has high etching resistance against oxygen,and etch rate of the film not only closely correlated with etching process parameters,but also with the deposition conditions.This film could be used as a resist in dry etching process.