Studies of energy dissipation distribution in low-energy electron beam lithography by Monte Carlo method
Monte Carlo方法研究低能电子束曝光沉积能分布规律

A physical model describing the scattering processes of low-energy electrons is proposed. The Monte Carlo method was applied to simulate the complex scattering processes of Gaussian-distribution low-energy electrons in the resist substrate target. And on this basis, the influences of different exposure conditions such as incident beam energy, resist thickness and substrate material on energy dissipation density were investigated to obtain the regularity of energy dissipation distribution. It is indicated that appropriately low beam energy, thin resist and low atomic number substrate can increase the contribution of forward scattering electrons to energy dissipation density distribution in the resist and reduce the contribution of backscattering electrons and thus improve the exposure resolution.