The intrinsic gettering in neutron irradiation czochralski-silicon
中子辐照直拉硅中的本征吸除效应

In this work,the intrinsic gettering in neutron irradiated czochralski\|silicon is studied.The result shows that a denuded zone at the surface of the neutron irradiated czochralski\|silicon wafer may be formed through one\|step short\|time annealing.The width of the denuded zone is dependent on the annealing temperature and the dose of neutron irradiation,while it is irrelated to the annealing time in case the denuded zone is formed.We conclude that the interaction between the defects induced by neutron irradiation and the oxygen in the silicon accelerates the oxygen precipitation in the bulk,and becomes the dominating factor of the quick formation of intrinsic gettering.It makes the effect of thermal history as the secondary factor.