Dynamical behaviour and its control in periodically driven semiconductor
周期驱动下半导体动力学行为及控制

A model for n GaAs based on nonlinear carrier transport theory has been proposed. Complex bifurcations are studied as the excited field varies. Numerical simulation shows that the system exhibits periodicity, quasi\|periodicity, and chaos, depending on the frequency and amplitude of the externally applied field, as expected. We also compute the quantities characterizing chaotic behaviours.An occasional pulse driving technique to control chaotic attactor to the desired periodic trajectory is illustrated.