A method for measuring the density of trapping charges in thin gate oxides
薄栅氧化层中陷阱电荷密度的测量方法

This paper presents an experimental method for measuring the density of trapping charges. This method is based on the dynamic equilibrium equation for the process of trapped charges. We can obtain the density and the location of trapping charges by measuring the high frequency C\|V curve of MOS capacitance before and after stress,and the change of gate voltage under constant current stress. The analytical expression of the density of trapping charges is proposed. The method and the results of parameters extraction are also presented. Experimental results show that this method is convenient and precise.