RAMAN SCATTERING FROM InAs NANOCRYSTALS EMBEDDED IN SiO2 THIN FILMS
镶嵌在SiO2薄膜中InAs纳米颗粒的Raman散射

Raman scattering from InAs nanocrystals embedded in SiO2 thin films has been measured and studied. Raman spectra of InAs nanocrystals have a similar feature with that of bulk InAs crystal. Broadened and red-shifted Raman scattering peaks were observed from the nanocrystals; this has been attributed to the phonon confinement effect. A compressive stress in the interface between InAs nanocrystals and the SiO2 matrix was also taken into account to interpret the red shift.