Study on the temperature properties of 4H-SiC MOSFET
4H-SiC MOSFET的温度特性研究

The device structure and temperature properties of 4H-SiC MOSFET have been studied.The influence of the device's structure parameter on its properties is summarized.The properties are compared at different temperatures and the variations of saturation drain current,threshold voltage,transconductance,on-resistance with temperature are presented.Simulation results show that 4H-SiC MOSFET can operate at 800K with excellent temperature properties.