CHARACTERISTIC ELECTRON ENERGY LOSS SPECTRA IN SiC BURIED LAYERS FORMED BY C+ IMPLANTATION INTO CRYSTALLINE SILICON
C+离子注入Si单晶形成SiC埋层中Si2p的特征能量损失谱

SiC buried layers were snythesized by a metal vapor vacuum arc ion source,with C+ ions implanted into crystalline Si substrates.According to X-ray photoelectron spectroscopy,the characteristic electron energy loss spectra of the SiC buried layers were studied.It was found that the characteristic electron energy loss spectra depend on the profiles of the carbon content,and correlate well with the order of the buried layers.