Analysis of self-heating effect on 4H-SiC RF power MESFETs
4H-SiC射频功率MESFET的自热效应分析

A large signal analytical model with temperature considered for 4H SiC radio frequency power MESFET I V characteristics is proposed based on the theory of saturated carrier velocity, by means of which the self heating effect is taken into account so as to analyze the temperature performance of SiC power MESFET. The heat transport between the channel and the substrate is modeled with non constant temperature T 0 at the bottom of 4H SiC substrate in order to fit the real actions of devices. A good agreement between simulation and measurement is obtained.