XPS STUDIES OF CeO2/Nb2O5 INTERFACE EFFECT ON THE IMPROVEMENT OF THE OXYGEN SENSITIVITY OF CeO2 LAYER
CeO2/Nb2O5界面效应对提高CeO2氧敏特性的XPS研究

The CeO2 single layer and CeO2/Nb2O5 double-layer films have been deposited on a Al2O3 ceramic substrates by a reactive rf/dc sputtering magnetron system. The variation of kinetic behavior of oxygen in CeO2 single layer with temperatures, and also the influence of CeO2/Nb2O5 interface on oxygen sensitivity of the films have been studied by XPS. X-ray photoelectron spectra of Ce3d core level were deconvoluted by Gaussian function for calculating the different concentration of Ce3+ and Ce4+ in the films. The results have shown that the CeO2/Nb2O5 double-layer could improve reduction capability of Ce4+ easily due to the interface effect, so that the reduction capability is higher in CeO2/Nb2O5 double-layer than they were in CeO2 single layer.