A Raman scattering study on ion-implanted CaN
离子注入GaN的拉曼散射研究

Raman spectroscopy measurements were performed on GaN samples before and after ion implantation.The properties of the three Raman peaks of 298,362 and 661cm -1 usually appeared in the ion-implanted GaN samples were systemically studies.The intensities of all the three Raman peaks decrease with increasing mass of the ions used in the ion implantation.The intensities of the 362 and 661cm -1 peaks decrease,while that of the 298cm -1 peak increases with increasing ion-implantation dose.With increasing annealing temperature,the intensities of all the three peaks increase first,and then decrease.The experimental phenomena and the origins of the three Raman peaks have been discussed.