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物理学报  2003 

Studies of broadband yellow luminescence of GaN
GaN的宽带黄光发射研究

Keywords: GaN film,absorption_normalized photoluminescent excitation spectros copy,broadband yellow luminescence
GaN薄膜,
,吸收归一化光致发光激发谱,,宽带黄光发射

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Abstract:

The broadband yellow luminescence(BYL) of undoped GaN film is fitted optimally by the linear superposition of multiple Gaussian functions by using nonlinear optimization technique. It is found that the BYL may be divided into the three Gauss_type spectra. It shows for the first time that the BYL originates from the combination of three independent radiative transitions. The energy levels of the initial states of the three independent transitions are measured directly in experiment by means of a novel absorption_normalized photoluminescent excitation spectroscopy. It is found that the three independent transitions have the same initial state but different final states. The origins of the initial and final states are assigned reasonably.

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