CALCULATION OF CRITICAL LAYER THICKNESS BY TAKING INTO ACCOUNT THE THERMAL STRAIN IN Si1-xGex /Si STRAIN LAYER HETEROSTRUCTURES
Si1-xGex/Si异质结构中热应力对临界厚度的影响

Effect of thermal strain on growth of SiGe strained layer on Si was analysed.Formulae for critical layer thickness were obtained by considering thermal strain in energy balance under the assumption of screw dislocation energy density equal to the sum of areal strain energy density and thermal strain energy density.The relationship between the thermal expansion coefficient associated with thermal strain and Ge content x was linear.The results are in good agreement with the experimental results reported.