HETEROEPITAXIAL GROWTH OF ZnSe ON GaAs(lOO) SUBSTRATE BY HOT WALL BEAM EPITAXY
GaAs(100)衬底上ZnSe薄膜的热壁束外延生长

ZnSe (100) single crystal films are grown by hot wall beam epitaxy on GaAs (100) substrate. The quality of films are examined by LEED and AES in situ. The films show sharp C(2×2) LEED pattern. When sample are prepared with high growth rate, the Raman spectra show that there are TO modes which are usually forbidden in ZnSe (100) films. ZnSe(100) films with <111> twin can be explained by the TO modes in the Raman spectra. This interpretation is supported by the result of XRD.