THE EFFECT OF DOPING CONCENTRATION ON BAND-GAP NARROWING OF p-TYPE GaAs
掺杂浓度对p-GaAs的带隙变窄的影响

The band-gap narrowing of p-type GaAs as a function of doping concentrafion has been investigated by photoluminescence spectroscopy on samples grown by molecular beam epitaxy on (110) semi-insulating GaAs. It was first found that the band-gap narrowing of p-type GaAs comes from the moving up of valence band, the location of dopant level (band) remains unchanged relative to conduction band, and the ionization energy decreases with the increase of doping concentration.