PREPARATION OF CUBIC C3N4 THIN FILMS BY LOW-PRESSURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
低压等离子体增强化学汽相沉积法制备立方氮化碳薄膜

Cubic C3N4 was synthesized on glass and silicon wafers by using low-pressure plasma enhanced chemical vapor deposition and silicon nitride interlayer technology.The crystalline structure was investigated by transmission electron microscopy (TEM),and this material has body centered cubic symmetrical structure.The lattice parameter a=0.536 nm determined by TEM is comparable to theoretical data 0.53973nm.The C1s and N1s binding energies are 285.01 and 398.60eV respectively,and the nitrogen content of the film is up to 42.96%,determined by X-ray photoelectron spectroscopy (XPS).The thin films on glass are transparent to light in the visible and near infrared region,and at 400 nm there appears strong light absorption.