BAND-EDGE DISCONTINUITIES AND COUPLING BETWEEN WELLS FOR GaAs/Al0.23Ga0.77As DOUBLE QUANTUM WELLS
GaAs/Al0.23Ga0.77As双量子阱的带边不连续性和阱间耦合

We report a detailed photoreflectance study at 300 and 77K of a set of GaAs/ Al0.23Ga0.77As double quantum well samples with different barrier widths Lb0.23Ga0.77As valence band to the first electron confined state and from the first light hole confined state to the bottom of the Al0.23Ga0.77As conduction band. By using these transitions the conduction band-edge discontinuity has been determined to be Qcb