THE VALENCE BAND STRUCTURES AND OPTICAL PROPERTIES OF STRAINED GaAs LAYERS GROWN ON THE GexSi1-x(001) SUBSTRATES
生长在GexSi1-x(001)衬底上应变GaAs层的价电子能带结构与光学性质

The valence band structures and third order nonlinear optical susceptibility of strained GaAs layers grown on the GexSi1-x(001) substrates were calculated in tight-binding frame.The results show that the strain makes the effective mass of holes as well as the dentity of state for the valence band decrease and makes the nonlinear optical susceptibility with polarity in (001) plane xxxxx(3) grow.