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物理学报  1989 

STUDY OF SLIP DISLOCATIONS IN GaAs CRYSTAL BY X-RAY TOPOGRAPHY
GaAs单晶滑移位错X射线形貌术研究

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Abstract:

Slip dislocation in In-doped and undoped GaAs single crystal were investigated by meant of X-ray topography. Different configurations of the slip dislocations were observed, which resulted from the different densities of dislocations. The mechanism of die slip dislocation and cellular network structure formation is also discussed preliminarily.

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