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物理学报 1989
STUDY OF SLIP DISLOCATIONS IN GaAs CRYSTAL BY X-RAY TOPOGRAPHY
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Abstract:
Slip dislocation in In-doped and undoped GaAs single crystal were investigated by meant of X-ray topography. Different configurations of the slip dislocations were observed, which resulted from the different densities of dislocations. The mechanism of die slip dislocation and cellular network structure formation is also discussed preliminarily.