全部 标题 作者
关键词 摘要

OALib Journal期刊
ISSN: 2333-9721
费用:99美元

查看量下载量

相关文章

更多...
物理学报  1991 

BREAKDOWN CHARACTERISTICS OF RAPID THERMAL NITRIDED SiO2 FILM OF 150? THICKNESS
150?快速热氮化SiO2膜的击穿特性

Keywords: 热氮化,SiO2,薄膜,击穿

Full-Text   Cite this paper   Add to My Lib

Abstract:

The silicon dioxide film of thickness 150? with device quality has been nitrided thermally by conventional long time method and high temperature rapid method. For the films breakdown characteristics and endurance under high field were investigated. These results indicate that after nitridation, the distribution of breakdown field strength narrows, its dependence on electrode area decreases, and the maximum breakdown field strength degrades slightly. At the same time, SiO2/Si interface stability under high field and time-dependent dielectric breakdown characteristics are improved by thermal nitridation. The improvement depends strongly oh both the electrode direction of applied gate voltage and nitridation processing condition. According to the mechanism of current transport, we suggest a breakdown model in which charge accumulation, trapping density and position of its center of gravity are all considered.

Full-Text

Contact Us

service@oalib.com

QQ:3279437679

WhatsApp +8615387084133