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物理学报  1982 

DISLOCATIONS AND INCLUSIONS IN CZOCHRALSKI METHOD-GROWN YAG SINGLE CRYSTALS
直拉法生长Y3Al5O12(YAG)单晶体中的位错和包裹物

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Abstract:

The relationship between the dislocations, the inclusions and the growth striations in YAG single crystals were studied with birefringence topography. The experimental evidence shows that the inclusions are adsorped preferentially at the outcrops of dislocations at the solid-liquid interface and the relative sizes of the inelusions correspond to the heights of growth-steps which are related to the normal components of Burgers vectors of dislocations.

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