DYNAMIC REFLECTION PROPERTY OF ION-IMPLANTED Si BY CW CO2 LASER ANNEALING
离子注入Si在连续CO2激光退火时的动态反射特性

The change of reflectivity of P-implanted Si with time under high power CW CO2 laser irradiation has been measured by infrared detector. We discover that the reflectivity increases irreversibly in both the laser heating and cooling processes. This means that the surface carrier concentration of ion-implanted Si would change similarly.