A NEW MODE OF FOUR-POINT PROBE TECHNIQUE FOR THE MEASUREMENT OF SEMICONDUCTOR SHEET RESISTANCE
用四探针技术测量半导体薄层电阻的新方案

A new method for measuring sheet resistance of semiconductor using four-point probe has been developed. Its characteristies are as follows, (a) the distances between probes can be unequal for the large thin slices as well as for the samples with finite extent. The result obtained does not depend on the probe spacings. Errors due to unequal probe spacings are eliminated; (b) it is not neccesaxy to take into account the geometry corrections for the rectangular and circular small specimens. The knowledge of its dimensions, so that, is needless. The value of the resistance can be determined from electrical measurement only.