MEASUREMENT OF MINORITY CARRIER LIFETIME IN Ge AND Si BY THE SPREADING-RESISTANCEPHOTO-DECAY METHOD
用触针下分布电阻的光电导衰退测量锗和硅中少数载流子的寿命

The photo-conductive decay of the spreading resistance of Ge and Si is investigated. The influence of the surface recombination velocity and the depth of absorption of the exciting light on the shape of the decay curve are studied in detail. The decay curves obtained are consistent with those predicted by the theory. The conditions required for accurate measurement of bulk lifetime are also discussed.