STATISTICAL THEORY OF DEFECTS AND INPURITIES IN AMORPHOUS SEMICONDUCTORS
非晶半导体中杂质和缺陷态的电子统计理论

This article discusses doping effects in amorphous semiconductors, especially the properties at low temperatures, using the method of statistical physics. With approximation of single dangling bond, the positions of Fermi level and the electron densities have been calculated for two groups of amorphous semiconductors.