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物理学报 1980
MORPHOLOGY OF THE COPPER PRECIPITATES IN SILICON SINGLE CRYSTALS
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Abstract:
In this article, infra-red microscopy and etching method were used to study the morphology of the copper precipitates in silicon crystals. It was found that a variety of copper precipitates observed by ir microscopy consists of precipitated disks laying in {110} planes and their morphology bears no relation to the properties of the sample.