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物理学报  1980 

MORPHOLOGY OF THE COPPER PRECIPITATES IN SILICON SINGLE CRYSTALS
硅单晶中铜沉淀物的几何形态

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Abstract:

In this article, infra-red microscopy and etching method were used to study the morphology of the copper precipitates in silicon crystals. It was found that a variety of copper precipitates observed by ir microscopy consists of precipitated disks laying in {110} planes and their morphology bears no relation to the properties of the sample.

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