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生物物理学报 2002
AN ANALYSIS ON THE MUTAGENIC EFFECTS OF LOW ENERGY ION IMPLANTATION IN Arabidopsis thaliana
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Abstract:
The seeds of Arabidopsis thaliana implanted with low energy N+ and C+ ions were used, and germination indices (germination percentage and germination impetus) were counted. By means of improved RAPD method, random fragment polymorphism amplification of genome DNAs of the Arabidopsis thaliana plants grown from N+ ion implanted seeds was done with 11 primers, 4 of which amplified differential fragments. The results showed that, with a certain appropriate dosage of N+ or C+ ions, the germination percentage may be increased. Both of the peak germination percentage values of the two kinds of ions (92.3% and 74.4% respectively) were at 5×1014 ions/cm2. The analysis of the N+ implanted materials revealed that, within the limit of implantation from 1×1013-1×1016 ions/cm2, the change tendency of genome DNA variation percentages is basically consistent with that of germination indices, and the peak value of variation percentages (9.0%) was at 1×1015 ions/cm2. This suggested that the optimum implantation doses for analyzing the mutagenic effects of low energy N+ ion are in the range of 1×1014-5×1015 ions/cm2. According to the comparison between N+ and C+ ion implantation, the mutagenic percentage of C+ ion, within a certain range, is higher than that of N+ ion at the same dosage.
