A new level-shifting structure with multiply metal rings by divided RESURF technique
一种采用分区RESURF技术并应用多金属环终端技术的新的电平位移结构

A new structure of a lateral n-MOST and a new level-shifting structure with multiply metal rings (MMRs) by divided RESURF technique have been proposed. The device and electrical performances of the structure are analyzed and simulated by MEDICI. In comparison to the level-shifting structure with multiply floating field plates (MFFPs) used before, the structure stated here improves the reliability and diminishes the voltage difference between the voltage of the power supply of the high-side gate driver and the voltage of the output terminal of the level-shifting structure, which is also that of the input terminal of the high-side gate driver. The maximal voltage difference of the level-shifting structure in this paper is 30% lower than that used before. Therefore, good voltage isolation and current isolation are obtained. The structure can be used in the level-shifting circuit of various applications.