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半导体学报 2009
Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions
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Abstract:
A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating vari