Material removal rate of 6H-SiC crystal substrate CMP using an alumina (Al2O3) abrasive
基于白刚玉微粉的6H-SiC单晶基片化学机械抛光材料去除率研究

The influences of the polishing slurry composition, such as the pH value, the abrasive size and its concentration, the dispersant and the oxidants, the rotational velocity of the polishing platen and the carrier and the polishing pressure, on the material removal rate of SiC crystal substrate (0001) Si and a (0001) C surface have been studied based on the alumina abrasive in chemical mechanical polishing (CMP). The results proposed by our research here will provide a reference for developing the slurry, optimizing the process parameters, and investigating the material removal mechanism in the CMP of SiC crystal substrate.