One-phonon resonant electron Raman scattering in multilayer coaxial cylindrical AlxGa1-xAs/GaAs quantum cables
多层柱形 AlxGa1-xAs/GaAs量子线的一阶声子拉曼散射

We have presented a theoretical calculation of the differential cross section (DCS) for the electron Raman scattering (ERS) process associated with the interface optical (IO) and surface optical (SO) phonons in multilayer coaxial cylindrical AlxGa1-xAs/GaAs quantum cables (QC). We consider the Fr hlich electron-phonon interaction in the framework of the dielectric continuum approach. The selection rules for the processes are studied. Singularities are found to be sensitively size-dependent and by varying the size of the QC, it is possible to control the frequency shift in the Raman spectra. A discussion of the phonon behavior for the QC with different size is presented. The numerical results are also compared with those of experiments.