Off-state avalanche breakdown induced degradation in 20 V NLDMOS devices
20V NLDMOS器件在关态雪崩击穿条件下的退化

Degradation behaviors of 20 V NLDMOS operated under off-state avalanche breakdown conditions are presented. A constant current pulse stressing test is applied to the device. Two different degradation mechanisms are identified by analysis of electrical data, technology computer-aided design (TCAD) simulations and charge pumping measurements. The first mechanism is attributed to positive oxide-trapped charges in the N-type drift region, and the second one is due to decreased electron mobility upon interface state formation in the drift region. Both of the mechanisms are enhanced with increasing avalanche breakdown current.