Study, Modeling and Characterization of Dual-Band LNA Amplifiers Receivers for Wireless Microwaves Communication Systems

The new current design is especially suitable for use in multi-standard wireless receiver for microwaves communication systems. In recent years, there1.34 dB with 12.06 dB. has been a growing market for dual band transceivers for various wireless standards. This work investigates a novel circuit topology of concurrent Dual-band Low Noise Amplifier (LNA) operates in the 3.9 GHz and 4.48 GHz frequency bands for WLAN applications and may be used for dual band cellular applications. RF circuit designs take two parallel LNAs with a single transistor only, and band-pass filter (BPF) networks are usually used match both the input and output ports at two different bands, are matched to 50Ω without external elements. The transistor ATF1 0136 is chosen for the purpose of high gain and low noise characteristics. Simulations of the operation of the amplifier were performed with the software ADS and Ansoft software and performance of the amplifier were recorded and analyzed. Simulation results indicate a Noise Figure NF below 1.5dB and a gain S21 above 11 dB in all frequency bands and also input and output return loss are below -11 dB for all desired frequency band while drawing 2.5mA current from a 5V power supply. The chip provides a good basis for the realization of WLAN low-cost RF receivers for dual-band operation. These performances situate this receiver among the most competitive low cost and low power RF receivers. All the principles carry out in this work are furthermore transposable to other frequencies and to other transmission standards.