Symmetric DG-MOSFET With Gate and Channel Engineering: A 2-D Simulation Study

The present work is the study on the performance value of Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with different channel and gate engineering. Six different structures have been proposed and analysed keeping channel length constant. The short channel parameters like sub threshold swing (SS), transconductance (gm), electric field, leakage current (Ioff), electron mobility (μn) and drain induced barrier lowering (DIBL) are analysed and compared between Gate Stack Double Gate (GS-DG), GS-DG-Single Halo (SH), GS-DG-Double Halo (DH), GS-DG Tri-material (TM), GS-DG TM-SH and GS-DG-TM-DH MOSFETs. This work extensively provides the device structures which may be applicable for high speed switching and low power consumption application. In addition, the effects of gate misalignment on source/drain, device characteristics and various short channel parameters have been discussed and analysed. The simulation and parameter extraction have been done by using the commercially available device simulation software ATLASTM.