Macromodeling with Spice of SiC Schottky Diode

This paper presents a SiC Schottky diode model including static and dynamic features implemented as a parameterized block constructed from SPICE Analog Behavioral Modeling (ABM) controlled sources. The parameters for this block are easy to extract, even from readily available diode data sheet information. This model can easily simulate the diode’s reverse recovery and power losses behavior over all temperatures from 0℃ to 175℃.