Yet Another Hydrodynamic Model with Correlated Parameters for Silicon Devices

In this paper we present a complete hydrodynamic model (HDM) describing the transport of charge carriers in semiconductor devices with arbitrary band structure. The model is appended with advanced physical models for almost all the physical parameters of interest in modern Si Devices. These parameters are inter-related via the carrier energy relaxation time. An improved analytical model of the carrier heat flux, on the basis of a fourth moment of the Boltzmann transport equation (BTE), is also presented. In order to resolve the heat evacuation problems in SOI and power devices, the model is coupled with a lattice heat conservation equation. The transport of hot carriers is simulated, according to the proposed HDM and the results are compared with the conventional data obtained using the drift-diffusion model (DDM) and MC simulation. We show from the HD simulation, the effect of the energy relaxation time value on the hot carrier transport in general and the breakdown voltage in particular, of both MOSFETs and bipolar devices.