Radiation Effect on Optical and Electrical Properties of CdSe(In)/P-Si Heterojunction Photovoltaic Solar Cells

The efficiency and radiation resistance of solar cells are graded up. They are, then, fabricated in the form n-CdeSe (In)/P-Si Heterojunction cells by electron beam evaporation of a stoichiomteric mixture of CdSe and In to make a thin film on a P-Si single crystal wafers with thickness 100 μm and resistivity ~ 1.5 .cm at a temperature 473 ok . The short-circuit current density (jsc), open-circuit voltage (Voc), fill factor (ff) and conversion efficiency (η) under Am1 are 20 mA/cm2 , 0.49 V, 0.71 and 6% respectively . The cells were exposed to different electron doses (electron beam accelerator of energy 1.5 MeV, and beam intensity 25 mA). The cells performance parameters are measured and discussed before and after irradiation.