Macromodeling of Power VDMOSFET Transistor Incorporating Self-Heating Effect

Self heating model simulation of power electronic semiconductors is now required in accurate optimisation of power electronic circuits and systems. This requires accurate, but not too complex, self heating models of power semiconductors to be used in commercially available power electronic circuit simulators. Realization of one such self-heating model for power VDMOSFET in PSPICE 10.5 is described in the paper. Model consists of electrical and thermal part with interactive exchange of variables. Self-heating model and standard model was tested on unclamped inductive circuit.