Growth, Structural and Electrical Characterization of Tungsten Diselenide Crystals Grown by Dvt Technique

WSe2 is known to have layered structure with various polytypes having different stacking structures developing on conditions prevailing during the synthesis of crystals. Looking to its potential for application in electronic devices, it will be important to investigate growth conditions vis a vis electrical properties which depends on structure. Crystals of Tungsten Diselenide (WSe2) have been grown by direct vapor transport (DVT) technique using micro processor controlled dual zone horizontal furnace. The chemical composition and structure of grown crystals were confirmed using energy dispersive analysis of X-ray (EDAX) and X-ray diffraction (XRD). In the present investigation thermoelectric power measurements (TEP) have been carried out on the grown crystals. Different electrical transport parameters of semiconductors have been determined and discussed in the paper. The Ohmic nature of contacts prepared for van der Pauw geometry in case of various pairs of contacts at 300 K The ohmic contacts were developed using Ag-paste and the Hall effect measurements have been carried out in the temperature range 50 - 300 K to determine some essential parameters such as the hole mobility (μ), carrier concentration (n), Hall coefficient (RH).Transition metal dichalcogenides materials (TMDCs) use in photovoltaic and photo electrochemical (PEC) solar cells is because of their inherent resistive nature to photo corrosion.