CuInSe2 thin films obtained by pulse-plating electrodeposition technique with novel pulse wave

CuInSe2 films were electrodeposited onto indium tin oxide (ITO) substrate in constant current mode using bell-like wave modulated square wave in aqueous solution. The films obtained at different pulse frequencies were characterized by scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). UV-Vis-NIR absorption spectroscopy was used to study the optical properties of these films. The results showed that the chalcopyrite phase CuInSe2 films with a smooth surface and stoichiometric composition could be obtained at appropriate pulse frequency. The crystallinity of CuInSe2 films could be further improved after annealing treatment. Despite this, we also found that the films obtained using the pulse-plating electrodeposition technique had a faster deposition rate and better film adhesion ability than that using the traditional CIS electrodeposition technique, which is significant to the low-cost CIS thin film solar cell production.