Performance analysis of impurity added benzene based single-electron transistor

We have analyzed the impurity added benzene based single-electron transistor (SET) using the ab initio approach, based on density functional theory and non-equilibrium Green’s function. Boron and nitrogen has been added as impurities either by replacing the last carbon atom or last hydrogen in the benzene. The system has been modeled in such a way that the impurity added benzene is placed above the gate dielectric in coulomb blockade regime between source and drain electrodes for weak coupling. The charging energies of the system have been calculated and discussed in both the isolated as well as SET environments. The conductance dependence of SET on bias potential and gate voltage has been verified through charge stability diagrams.