Abnormal Raman spectral phenomenon of silicon nanowires

The Raman spectra of two one-dimensional silicon nanowire samples with different excitation wavetengths were measured and an abnormal phenomenon was discovered that the Raman spectral features change with the wavetengths of excitation. Closer analysis of the crystalline structure of samples and the changes in Raman spectral features showed that the abnormal behavior is the result of resonance Raman scattering setection effect.