In this paper, we modeled a core/shell/shell structure with cylindrical Schrodinger-Poisson coupled equation when a magnetic field is (and is not) applied along its axis. We showed the electron density is peaked near the outer surface of the channel when the magnetic field is applied. Therefore one may make a nano-device which its electrons move only on its outer surface. Also we applied a gate voltage to the device and showed a higher threshold voltage (to turn on the device) is necessary when a magnetic field is applied. This is because of the increase in the lowest energy level similar to the size quantization. i.e a device with longer channel looks like a device with shorter channel if it is placed in a magnetic field parallel to its axis.
References
[1]
L. J. Lauhon, M. S. Gudiksen, D. Wang and C. M. Lieber, “Ep-itaxial Core–Shell and Core–Multishell Nanowire Heterostruc-tures,” Nature, Vol. 420, No. 6911, 2002, pp. 57-61. doi:10.1038/nature01141
[2]
J. Goldberger et al. “Sin-gle-Crystal Gallium Nitride Nanotubes,” Nature, Vol. 422, No. 6932, 2003, pp. 599-602. doi:10.1038/nature01551
[3]
F. Qian, Y. Li, S. Gradecak, D. Wang, C. J. Barrelet and C. M. Lieber , “Gallium Nitride-Based Nanowire Radial Heterostruc-tures for Nanophotonics,” Nano letters, Vol. 4, No. 10, 2004, pp. 1975-1979. doi:10.1021/nl0487774
[4]
F. Qian et al, “Core/Multishell Nanowire Heterostructures as Multicolor, High-Efficiency Light-Emitting Diodes,” Nano letters, Vol. 5, No. 11, 2005, pp. 2287-2291. doi:10.1021/nl051689e
[5]
Oliver Hayden et al, “Core-Shell Naowire Light-Emitting Diodes,” Advanced Materials, Vol. 17, No. 6, 2005, pp.701-704. doi:10.1002/adma.200401235
[6]
Y. Dind et al, “Interface and Defect Structure of Zn-ZnO Core-Shell Heteronanobelts,” Journal of Applied Physics, Vol. 95, No. 1, 2004, p. 306.
[7]
T. Mokari and U. Banin, “Syn-thesis and properties of CdSe/ZnS Rod/Shell Nanocrystals,” Chemistry of Materials, Vol. 15, No. 20, 2003, pp. 3955-3960.
[8]
Joachim Piprek et al, “Simulation and Opti-mization of 420 nm InGaN/GaN laser Diodes,” Proceedings of SPIE, Vol. 3944, 2000, p. 28.
[9]
L. Q. Wang et al, “A Nu-merical Schrodinger-Poisson Solver for Radially Symmetric Core-Shell Structures,” Solid-State Electronics, Vol. 50, No. 11-12, 2006, pp. 1732-1739.
doi:10.1016/j.sse.2006.09.013
[10]
Y. R. Wu, P. C. Yu, C. H. Chiu, C. Y. Chang and H. C. Kuo, “Analysis of Strain Relaxa-tion and Emission Spectrum of A Free-Standing GaN-based Nanopillar,” Proceedings Of SPIE, Vol. 7058, 2008, pp. 7058G-7058G-10.
doi:10.1117/12.800658
[11]
F. Kootstra, P. L. de Boeij, H. Aissa and J. G. Snijders, “Relativistic Effects on the Optical Response of InSb by Time-Dependent Density-Functional Theory,” Journal of Chemical Physics, Vol. 114, No. 4, 2001, pp. 1860-1865.
doi:10.1063/1.1334615
