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C-Band 3.5W/mm InGaP/GaAs HBT Power Transistors with >40% Power-Added Efficiency
C波段3.5W/mm, PAE>40%的InGaP/GaAs HBT功率管

Keywords: InGaP/GaAs,power,heterojunction bipolar transistor
InGaP/GaAs
,异质结双极晶体管,功率管,波段,InGaP,GaAs,功率附加效率,Transistors,Power,功率密度,饱和输出功率,连续波,击穿电压,工艺技术,空气桥,电镀,镇流,发射极,自对准,金属,器件结构,材料结构,异质结双极晶体管

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Abstract:

A C-band InGaP/GaAs HBT power transistor with an optimized material structure and device peripheral structure is designed and fabricated by base-emitter metal self-aligning,emitter ballasting,and an electric plated air bridge.The measured BVCBO is greater than 31V and the BVCEO is greater than 21V.At a frequency of 5.4GHz,the saturated CW output power of the fabricated HBT power transistor is more than 1.4W with a maximum power density of 3.5W/mm,and the power added efficiency is greater than 40%.

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