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Amelioration of type 1 diabetes following treatment of non-obese diabetic mice with INGAP and lisofylline  [PDF]
Sarah A. Tersey, Jeffery D. Carter, Lawrence Rosenberg, David A. Taylor-Fishwick, Raghavendra G. Mirmira, Jerry L. Nadler
Journal of Diabetes Mellitus (JDM) , 2012, DOI: 10.4236/jdm.2012.22040
Abstract: Type 1 diabetes mellitus results from the autoimmune and inflammatory destruction of insulin-producing islet β cells, rendering individuals devoid of insulin production. Recent studies suggest that combination therapies consisting of anti-inflammatory agents and islet growth-promoting factors have the potential to cause sustained recovery of β cell mass, leading to amelioration or reversal of type 1 diabetes in mouse models. In this study, we hypothesized that the combination of the anti-inflammatory agent lisofylline (LSF) with an active peptide fragment of islet neogenesis associated protein (INGAP peptide) would lead to remission of type 1 diabetes in the non-obese diabetic (NOD) mouse. We treated groups of spontaneously diabetic NOD mice with combinations of LSF, INGAP peptide, or control saline parenterally for up to 6 weeks. Our results demonstrate that the mice receiving combined treatment with LSF and INGAP peptide exhibited partial remission of diabetes with increased plasma insulin levels. Histologic assessment of pancreata in mice receiving combined therapy revealed the presence of islet insulin staining, increased β cell replication, and evidence of Pdx1-positivity in ductal cells. By contrast, diabetic animals showed severe insulitis with no detectible insulin or Pdx1 staining. We conclude that the novel combination treatment with LSF and INGAP peptide has the potential to ameliorate hyperglycemia in the setting of established type 1 diabetes via the recovery of endogenous β cells and warrant further studies.
Large signal RF power transmission characterization of InGaP HBT for RF power amplifiers
InGaP HBT 大信号RF功率传输特性

Zhao Lixin,Jin Zhi,Liu Xinyu,
赵立新
,金智,刘新宇

半导体学报 , 2010,
Abstract: The large signal RF power transmission characteristics of an advanced InGaP HBT in an RF power amplifier are investigated and analyzed experimentally. The realistic RF powers reflected by the transistor, transmitted from the transistor and reflected by the load are investigated at small signal and large signal levels. The RF power multiple frequency components at the input and output ports are investigated at small signal and large signal levels, including their effects on RF power gain compression and nonlinearity. The results showthat the RF power reflections are different between the output and input ports. At the input port the reflected power is not always proportional to input power level; at large power levels the reflected power becomes more serious than that at small signal levels, and there is a knee point at large power levels. The results also showthe effects of the powermultiple frequency components on RF amplification.
High Power-Added-Efficiency InGaP/GaAs Power HBT
高功率附加效率的InGaP/GaAs功率HBT

Zheng Liping,Yuan Zhipeng,Fan Yuwei,Sun Haifeng,Di Haocheng,Wang Suqin,Liu Xinyu,and Wu Dexin,
郑丽萍
,袁志鹏,樊宇伟,孙海锋,狄浩成,王素琴,刘新宇,吴德馨

半导体学报 , 2005,
Abstract: 采用发射极基极金属自对准工艺,成功研制出了InGaP/GaAs功率HBT.发射极尺寸为(3μm×15μm)×16的功率器件的截止频率和最高振荡频率分别为55GHz和35GHz.在片load-pull测试表明:当工作频率为1GHz时,器件工作在AB类,该功率管最大输出功率为23.5dBm,最大功率附加效率达60%,P1dB的输出功率为21dBm,对应增益为16dB,工作电压为3.5V.
10Gb/s光调制器InGaP/GaAsHBT驱动电路的研制
袁志鹏,刘洪刚,刘训春,吴德馨
电子学报 , 2004,
Abstract: 采用自行研发的4英寸InGaP/GaAsHBT技术,设计和制造了10Gb/s光调制器驱动电路.该驱动电路的输出电压摆幅达到3Vpp,上升时间为34.2ps(20~80%),下降时间为37.8ps(20~80%),输入端的阻抗匹配良好(S11=-12.3dB@10GHz),达到10Gb/s光通信系统(SONETOC-192,SDHSTM-64)的要求.整个驱动电路采用-5.2V的单电源供电,总功耗为1.3W,芯片面积为2.01×1.38mm2.
The microwave large signal load line of an InGaP HBT
InGaP HBT 微波大信号负载线特性

Zhao Lixin,Jin Zhi,Liu Xinyu,
赵立新
,金智,刘新宇

半导体学报 , 2010,
Abstract: The microwave dynamic load line characteristics of an advanced InGaP HBT are investigated experimentally and analyzed at small signal level and at large signal level for microwave power amplification. Investigation results show that the dynamic load curves are not always like an elliptic curve, and the current extreme points do not locate at voltage extreme points. The dynamic load curve current extreme point lines sit at the small signal load line up to the P-3dB point, and the lines show a constant slope from a small signal up to the saturation power point. A method to calculate the realistically delivered power to load is presented which fits the test result well.
Self-Aligned InGaP/GaAs HBT Monolithic Transimpedance Amplifier
自对准InGaP/GaAs HBT单片集成跨阻放大器

王延锋,孙海峰,刘新宇,和致经,吴德馨
半导体学报 , 2003,
Abstract: 对自对准 In Ga P/ Ga As HBT单片集成跨阻放大器进行了研究 .采用发射极金属做腐蚀掩膜并利用 Ga As腐蚀各向异性的特点来完成 BE金属自对准工艺 ,最终制作出的器件平均阈值电压为 1.15 V,单指管子电流增益为5 0 ,发射极面积 4μm× 14μm的单管在 IB=2 0 0μA和 VCE=2 V偏压条件下截止频率达到了 4 0 GHz.设计并制作了直接反馈和 CE- CC- CC两种单片集成跨阻放大器电路 ,测量得到的跨阻增益在 3d B带宽频率时分别为 5 0 .6 d BΩ和 4 5 .1d BΩ ,3d B带宽分别为 2 .7GHz和 2 .5 GHz,电路最小噪声系数分别为 2 .8d B和 3.2 d B.
Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers
用于微波放大器的InGaP HBT微波动态大信号波形特性

Zhao Lixin,Jin Zhi,Liu Xinyu,
赵立新
,金智,刘新宇

半导体学报 , 2009,
Abstract: In wireless mobile communications and wireless local area networks (WLAN), advanced InGaP HBT with power amplifiers are key components. In this paper, the microwave large signal dynamic waveform characteristics of an advanced InGaP HBT are investigated experimentally for 5.8 GHz power amplifier applications. The microwave large signal waveform distortions at various input power levels, especially at large signal level, are investigated and the reasons are analyzed. The output power saturation is also explained. These analyses will be useful for power amplifier designs.
A Simplified VBIC Model and InGaP/GaAs HBT Wideband Amplifier Design
一种简化的VBIC模型和InGaP/GaAs HBT宽带放大器设计

Sun Lingling,Liu Jun,
孙玲玲
,刘军

半导体学报 , 2005,
Abstract: 采用一种新的简化VBIC模型对单、多指InGaP/GaAs HBT器件进行建模.测量和模型仿真I-V特性及其在多偏置条件下多频率点S参数对比结果表明,DC~9GHz频率范围内,简化后的模型可对InGaP/GaAs HBT交流小信号特性进行较好的表征.利用建立的模型设计出DC~9GHz两级直接耦合宽带放大器,该放大器增益达到19dB,输入、输出回波损耗分别低于-10dB和-8dB.
10Gbps Transimpedance Amplifier for Optoelectronic Receivers Based on InGaP/GaAs HBTs
基于InGaP/GaAsHBT的10Gbps跨阻放大器(英文)

Yuan Zhipeng,Sun Haifeng,Liu Xinyu,Wu Dexin,
袁志鹏
,孙海锋,刘新宇,吴德馨

半导体学报 , 2004,
Abstract: 采用InGaP/GaAsHBTs设计并实现了传输速率为10Gbps的跨阻放大器.在电路设计上采用两级放大器级联的形式以提高跨阻增益,在第一级采用了cascade结构,第二级采用了cherryhooper结构以提高电路的带宽和稳定性.测试结果表明,跨阻增益为40dB·Ω,3dB带宽为10GHz.
Super Performance InGaP/GaAs Heterojunction Bipolar Transistor with Hexagonal Emitter
高性能六边形发射极InGaP/GaAs异质结双极型晶体管(英文)

Liu Honggang,Yuan Zhipeng,He Zhijing,Wu Dexin,
刘洪刚
,袁志鹏,和致经,吴德馨

半导体学报 , 2003,
Abstract: 六边形发射极的自对准In Ga P/ Ga As异质结具有优异的直流和微波性能.采用发射极面积为2μm×10μm的异质结双极型晶体管,VCE偏移电压小于15 0 m V,膝点电压为0 .5 V(IC=16 m A) ,BVCEO大于9V,BVCBO大于14 V,特征频率高达92 GHz,最高振荡频率达到10 5 GHz.这些优异的性能预示着In Ga P/ Ga As HBT在超高速数字电路和微波功率放大领域具有广阔的应用前景
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