An Analytical Charge Control Model of Double Planar Doped HEMTs
双异质结双平面掺杂HEMT器件的电荷控制模型

By using linear E f n s approximation,a new analytical charge control model of the double heterojunction double planar doped high electron mobility transistor (HEMT) is deduced based on Poisson's equation.The heterojunction band theories,the relations among the doping concentration,the distance from the gate to the top planar doped plane and the pinchoff voltage,and the 2DEG density of the device are calculated and analyzed.The model provides a valuable tool for the optimization and performance prediction of the double planar doped HEMT.