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DC Characteristics of AlGaN/GaN HEMTs with a Field Plate Gate
具有场板结构的AlGaN/GaN HEMT的直流特性

Wei Ke,Liu Xinyu,He Zhijing,Wu Dexin,
魏珂
,刘新宇,和致经,吴德馨

半导体学报 , 2008,
Abstract: This paper reports two kinds of AlGaN/GaN HEMTs with the field plate gate.In contrast with a conventional HEMT structure,their DC characteristics are improved and the broken voltage is over 100V.The reverse leakage current of the Schottky gate is reduced from 0.037 to 0.0057mA with a 100V voltage between gate and drain using a field plate.Its broken voltage is increased from 78 to over 100V.The HEMTs with the gate field plate structure and the source field plate structure are compared and their high frequency characteristics are also discussed.
X-Band Internally-Matched GaN HEMTs
X波段GaN HEMT内匹配器件

Wang Yong,Li Jingqiang,Zhang Zhiguo,Feng Zhen,Song Jianbo,Feng Zhihong,Cai Shujun,Yang Kewu,
王勇
,李静强,张志国,冯震,宋建博,冯志红,蔡树军,杨克武

半导体学报 , 2008,
Abstract: With a self-developed GaN HEMT,the magnitude of leakage current between gate and drain is reduced to 1E-6A,the breakdown voltage is increased effectively,and the operating characteristic is improved.An MIS-GaN HEMT with 2.5mm gate-width is fabricated.When the operation voltage is 33V,the resultant device delivers a saturation output power of 18.2W,a power gain of 7.6dB,and a peak power added efficiency of 43.0% at a frequency of 8GHz CW.The internally-matched GaN HEMTs with a total gate-width of 2.5mm×4 deliver a saturation output power of 64.5W,a power gain of 7.2dB,and a power added efficiency of 39% at a frequency of 8GHz CW.
Design and Implementation of Ka-band AlGaN/GaN HEMTs
Ka波段AlGaN/GaN HEMT的研制

WANG Dong-Fang,YUAN Ting-Ting,WEI Ke,LIU Xin-Yu,LIU Guo-Guo,
王东方
,袁婷婷,魏珂,刘新宇,刘果果

红外与毫米波学报 , 2011,
Abstract: 采用缩小源漏间距、优化栅结构和外围结构等措施设计了AlGaN/GaN HEMT,并基于国内的GaN外延片和工艺完成了器件制备。测试表明所研制的AlGaN/GaN HEMT 可以满足Ka波段应用。其中2 75μm栅宽AlGaN/GaN HEMT在30V漏压下的截止频率(ft)为32GHz,最大振荡频率(fmax)为150GHz;在30GHz连续波测试条件下,线性增益达到10.2dB。6 75μm栅宽AlGaN/GaN HEMT的截止频率为32GHz,最大振荡频率为92GHz;在30GHz连续波测试条件下,线性增益达到8.5dB。器件的击穿电压在60V以上。
Development and Characteristic Analysis of MOS AlGaN/GaN HEMTs
MOS AlGaN/GaN HEMT研制与特性分析

Wang Chong,Yue Yuanzheng,Ma Xiaohu,Hao Yue,Feng Qian,Zhang Jincheng,
王冲
,岳远征,马晓华,郝跃,冯倩,张进城

半导体学报 , 2008,
Abstract: 研制出在蓝宅石衬底上制作的MOS AIGaN/GaN HEMT.器件栅长1um,源漏间距4um,采用电子束蒸发4nm的Si02做栅介质.在4V栅压下器件饱和电流达到718mA/mm,最大跨导为172mS/mm,ft和fmax分别为8.1和15.3GHz.MOS HEMT栅反向泄漏电流与未做介质层的肖特基栅相比,在反偏10V时由2.1×10-8mA/mm减小到8.3×10-9mA/mm,栅漏电流减小2个数量级.MOS AIGaN/GaN HEMT采用薄的栅介质层,在保证减小栅泄漏电流的同时未引起器件跨导明显下降.
Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs
基于氟等离子体表面处理技术的AlGaN/GaN HEMT器件栅正向泄漏电流研究

Chen Wanjun,Zhang Jing,Zhang Bo,Chen Kevin Jing,
陈万军
,张竞,张波,陈敬

半导体学报 , 2013,
Abstract: The gate forward leakage current in AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. It is shown that the current which originated from the forward biased Schottky-gate contributed to the gate forward leakage current. Therefore, a fluorine-plasma surface treatment is presented to induce the negative ions into the AlGaN layer which results in a higher metal-semiconductor barrier. Consequently, the gate forward leakage current shrinks. Experimental results confirm that the gate forward leakage current is decreased by one order magnitude lower than that of HEMT device without plasma treatment. In addition, the DC characteristics of the HEMT device with plasma treatment have been studied.
Current collapse mechanism of field-plated AlGaN/GaN HEMTs
场板结构AlGaN/GaN HEMT的电流崩塌机理

Wei Wei,Lin Ruo-Bing,Feng Qian,Hao Yue,
魏巍
,林若兵,冯倩,郝跃

物理学报 , 2008,
Abstract: Current collapse restrain ability of passivated AlGaN/GaN HEMTs and AlGaN/GaN HEMTs with varying field-plate(FP) length is investigated under different drain bias. The results show that, the passivated HEMTs suffer no current collapse at relatively low but not at higher drain bias, while the HEMTs with optimal field-plate suffer no current collapse for all drain bias used in our tests. Under high drain bias, the FP length plays a crucial role in the current collapse removal. After a thoroughly analysis, it can be concluded that FP structure not only restrains the trapping of virtual gate, but also discharge the virtual gate. Finally, a discharging model of dielectric under FP is presented to explain the effect of FP length on current collapse removal.
Current collapse mechanism of field-plated AlGaN/GaN HEMTs
场板结构AlGaN/GaN HEMT的电流崩塌机理

Wei Wei,Lin Ruo-Bing,Feng Qian,Hao Yue,
魏 巍
,林若兵,冯 倩,郝 跃

中国物理 B , 2008,
Abstract: Current collapse restrain ability of passivated AlGaN/GaN HEMTs and AlGaN/GaN HEMTs with varying field-plate(FP) length is investigated under different drain bias. The results show that, the passivated HEMTs suffer no current collapse at relatively low but not at higher drain bias, while the HEMTs with optimal field-plate suffer no current collapse for all drain bias used in our tests. Under high drain bias, the FP length plays a crucial role in the current collapse removal. After a thoroughly analysis, it can be concluded that FP structure not only restrains the trapping of virtual gate, but also discharge the virtual gate. Finally, a discharging model of dielectric under FP is presented to explain the effect of FP length on current collapse removal.
Effects of NF3 Plasma Treatment Prior to SiN Passivation on the Characteristics of AlGaN/GaN HEMTs
SiN钝化前的NF3等离子体处理对AlGaN/GaN HEMT性能的影响

Ren Chunjiang,Chen Tangsheng,Jiao Gang,Chen Gang,Xue Fangshi,Chen Chen,
任春江
,陈堂胜,焦刚,陈刚,薛舫时,陈辰

半导体学报 , 2008,
Abstract: NF3 plasma surface treatment in inductively coupled plasma (ICP) system prior to SiN passivation on the characteristics of AlGaN/GaN HEMTs has been studied.The results show that current collapse is effectively suppressed while DC and RF performance is not affected for the AlGaN/GaN HEMTs with low power NF3 plasma treated.The AlGaN/GaN HEMT with 6 minutes NF3 plasma treated reaches a power density of 6.15W/mm at 2GHz and 30V operating voltage while the device without NF3 plasma treated only gets an output power density of 1.82W/mm.
Gate-structure optimization for high frequency power AlGaN/GaN HEMTs
高频功率AlGaN/GaN HEMT 的栅结构优化

Wang Dongfang,Yuan Tingting,Wei Ke,Chen Xiaojuan,Liu Xinyu,
王东方
,袁婷婷,魏珂,陈晓娟,刘新宇

半导体学报 , 2010,
Abstract: In this paper, the influence of gate-head and gate-source-spacing on the performance of AlGaN/GaN HEMTs was studied. Then suggestions are gotten to improve performance of high frequency power AlGaN/GaN HEMTs by optimizing gate-structure. Reducing field-plate length can effectively enhance gain, and . By reducing field-plate length, the devices with 0.35 gate-length have exhibited a of 30GHz and a of 80GHz.The can be further optimized either by increasing gate-metal thickness, or by using tao-shape gate (the gate with gate-head tends to source side). Reducing gate-source spacing can enhance maximum drain-current and breakdown voltage, which is beneficial to enhance the maximum output power of AlGaN/GaN HEMTs.
具有MIS结构的n-AlGaAs/InGaAs/n-GaAs双调制掺杂赝HEMT
相奇,罗晋生,曾庆明,周均铭,黄绮
半导体学报 , 1992,
Abstract: 本文设计和研制了具有MIS结构的n-AlGaAs/InGaAs/n-GaAs 双调制掺杂赝HEMT.它结合了MISFET和双调制掺杂赝HEMT的特点.1μm栅长器件的最大漏电流密度达400mA/mm,栅反向击穿电压高达15V.器件还显示了良好的微波射频特性.
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