LDD is widely used in sub half micrometer CMOS VLSI.Due to its improvement of the distribution of electrical field in channel,the effect of high field near the drain is reduced.Consequently,the life of hot carrier of the circuits and devices is prolonged in the aspect of reliability.However,LDD has a poor performance against ESD stress.A research has been made on the latent damages under the influences of snapback.And special attention is given to the correlation with hot carrier in LDD gg nMOS during ESD events.
