We deposited Ge films on Si substrates by molecular beam epitaxy (MBE) method. The specimens were annealed at around 750 C using microwave- plasma heating technique which we had reported before. After these pro- cesses, we carried out special scanning transmission electron microscopic (STEM) observation. The moiré between the crystal lattices and the scanning lines controlled by STEM was utilized to show lattice-spacing distribution. The results exhibited that we were succeeded in forming lattice-relaxed Ge thin films. It was also recognized that this STEM moiré technique is very useful to observe lattice-spacing distribution for large area with high resolution.
Lee, C.H., Nishimura, T., Tabata, T., Wang, S.K., Nagashio, K., Kita, K. and Toriumi, A. (2010) Ge MOSFETs Performance: Impact of Ge Interface Passivation. 2010 IEEE International Electron Devices Meeting (IEDM), 18-1.
Currie, M.T., Samavedam, S.B., Langdo, T.A., Leitz, C.W. and Fitzgerald, E.A. (1998) Con-trolling Threading Dislocation Densities in Ge on Si Using Graded SiGe Layers and Chemical-Mechanical Polishing. Applied Physics Letters, 72, 1718-1720.
Arai, T., Nakaie, H., Kamimura, K., Nakamura, H., Ariizumi, S., Ashizawa, S. and Takamatsu, T. (2016) Selective Heating of Transition Metal Using Hydrogen Plasma and Its Application to Formation of Nickel Silicide Electrodes for Silicon Ultralarge-Scale Integration Devices. Journal of Materials Science and Chemical Engineering, 4, 29. https://doi.org/10.4236/msce.2016.41006
Arai, T., Kamimura, K., Yamamoto, C., Shirakura, M., Arimoto, K., Yamanaka, J., Nakagawa, K., Takamatsu, T., Ogino, M., Tachioka, M. and Nakazawa, H. (2017) Ohmic Contact Formation for n+ 4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation. Journal of Materials Science and Chemical Engineering, 5, 35-41. https://doi.org/10.4236/msce.2017.51005
Nakaie, H., Arai, T., Yamamoto, C., Arimoto, K., Yamanaka, J., Nakagawa, K. and Takamatsu, T. Reduction of dislocation Densities of Ge Layers Grown on Sisubstrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers. Journal of Materials Science and Chemical Engineering. (To Be Published)
Kim, S., Kim, J.J., Jung, Y., Lee, K., Byun, G., Hwang, K.H., Lee, S. and Lee, K. (2013) Reliable Strain Measurement in Transistor Arrays by Robust Scanning Transmission Electron Microscopy. AIP Advances, 3, Article ID: 092110.
Kim, S., Kondo, Y., Lee, K., Byun, G., Kim, J.J., Lee, S. and Lee, K. (2013) Quantitative Measurement of Strain Field in Strained-Channel-Transistor Arrays by Scanning Moiré Fringe Imaging. Appl. Phys. Lett., 103, Article ID: 033523.