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STEM Moiré Observation of Lattice-Relaxed Germanium Grown on Silicon

DOI: 10.4236/msce.2017.51014, PP. 102-108

Keywords: STEM Moiré, Lattice Strain, Ge on Si, Plasma Heating

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We deposited Ge films on Si substrates by molecular beam epitaxy (MBE) method. The specimens were annealed at around 750 C using microwave- plasma heating technique which we had reported before. After these pro- cesses, we carried out special scanning transmission electron microscopic (STEM) observation. The moiré between the crystal lattices and the scanning lines controlled by STEM was utilized to show lattice-spacing distribution. The results exhibited that we were succeeded in forming lattice-relaxed Ge thin films. It was also recognized that this STEM moiré technique is very useful to observe lattice-spacing distribution for large area with high resolution.


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